发明名称 |
Semiconductor Device and Fabrication Method |
摘要 |
In various embodiments, a semiconductor device may include: a carrier; a semiconductor chip disposed over a first side of the carrier; a layer stack disposed between the carrier and the semiconductor chip or over a second side of the carrier opposite the semiconductor chip, or both, the layer stack including at least a first electrically insulating layer, the first electrically insulating layer having a laminate having a first electrically insulating matrix material and a first mechanically stabilizing material embedded in the first electrically insulating matrix material.
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申请公布号 |
US2013154123(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
US201113330703 |
申请日期 |
2011.12.20 |
申请人 |
POH YONG CHERN;TAN SZE LIN CELINE;LEE TECK SIM;LEE KEAN CHEONG;OTREMBA RALF;SCHLOEGEL XAVER;SCHREDL JUERGEN;HOEGLAUER JOSEF;INFINEON TECHNOLOGIES AG |
发明人 |
POH YONG CHERN;TAN SZE LIN CELINE;LEE TECK SIM;LEE KEAN CHEONG;OTREMBA RALF;SCHLOEGEL XAVER;SCHREDL JUERGEN;HOEGLAUER JOSEF |
分类号 |
H01L23/48;H01L21/50 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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