发明名称 Semiconductor Device and Fabrication Method
摘要 In various embodiments, a semiconductor device may include: a carrier; a semiconductor chip disposed over a first side of the carrier; a layer stack disposed between the carrier and the semiconductor chip or over a second side of the carrier opposite the semiconductor chip, or both, the layer stack including at least a first electrically insulating layer, the first electrically insulating layer having a laminate having a first electrically insulating matrix material and a first mechanically stabilizing material embedded in the first electrically insulating matrix material.
申请公布号 US2013154123(A1) 申请公布日期 2013.06.20
申请号 US201113330703 申请日期 2011.12.20
申请人 POH YONG CHERN;TAN SZE LIN CELINE;LEE TECK SIM;LEE KEAN CHEONG;OTREMBA RALF;SCHLOEGEL XAVER;SCHREDL JUERGEN;HOEGLAUER JOSEF;INFINEON TECHNOLOGIES AG 发明人 POH YONG CHERN;TAN SZE LIN CELINE;LEE TECK SIM;LEE KEAN CHEONG;OTREMBA RALF;SCHLOEGEL XAVER;SCHREDL JUERGEN;HOEGLAUER JOSEF
分类号 H01L23/48;H01L21/50 主分类号 H01L23/48
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