| 摘要 |
A non-volatile semiconductor memory device includes a flash memory including plural blocks of memory cells, and a controller. The controller is configured to program a block of memory cells of the flash memory, to determine a first time period elapsed in which a given percentage of memory cells of the block of memory cells are programmed, and to compare the first time period with a reference second time period. The flash memory and controller are further configured, based on a comparison result between the first time period and the reference time period, to change an operational parameter associated with the block of memory cells, the changed operational parameter being in effect during at a next operational access of the block of memory cells.
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