| 发明名称 |
COMPOSITION FOR THICK FILM CONDUCTOR FORMATION, AND THICK FILM CONDUCTOR USING THE SAME AND MANUFACTURING METHOD THEREOF |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thick film conductor having less solder corrosion even when no lead is contained and having excellent acid resistance; and a composition for thick film conductor formation allowing formation of the thick film conductor. <P>SOLUTION: By using a composition for thick film conductor formation having conductive powder, SiO<SB POS="POST">2</SB>-B<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-Al<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-CaO-based glass powder, Al<SB POS="POST">2</SB>O<SB POS="POST">3</SB>powder, and oxide powder comprising β eucryptite (LiAlSiO<SB POS="POST">4</SB>) powder and substantially having no lead to obtain a conductor paste, with which a substrate is then coated followed by calcination at a temperature of 500°C or more and under 900°C, a thick film conductor with a membrane structure where anorthite (CaAl<SB POS="POST">2</SB>Si<SB POS="POST">2</SB>O<SB POS="POST">8</SB>) is uniformly precipitated inside and Li contained in the β eucryptite is fixed into the anorthite and a glass component is obtained. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013122864(A) |
申请公布日期 |
2013.06.20 |
| 申请号 |
JP20110270991 |
申请日期 |
2011.12.12 |
| 申请人 |
SUMITOMO METAL MINING CO LTD |
发明人 |
KAWAKUBO KATSUHIRO;ADACHI YOSHINORI;AWAGAKUBO SHINGO |
| 分类号 |
H01B1/16;H01B1/22;H01B5/14;H01B13/00;H05K3/12 |
主分类号 |
H01B1/16 |
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