发明名称 |
Hafnium tantalum oxynitride dielectric |
摘要 |
Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may be structured as one or more monolayers. The hafnium tantalum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a hafnium tantalum oxynitride film.
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申请公布号 |
US8466016(B2) |
申请公布日期 |
2013.06.18 |
申请号 |
US201113332222 |
申请日期 |
2011.12.20 |
申请人 |
FORBES LEONARD;AHN KIE Y.;BHATTACHARYYA ARUP;MICRON TECHNOLGY, INC. |
发明人 |
FORBES LEONARD;AHN KIE Y.;BHATTACHARYYA ARUP |
分类号 |
H01L21/338 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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