发明名称 |
Method for fabricating a porous semiconductor body region |
摘要 |
A method may include producing at least one trench in a semiconductor body, starting from a surface of the semiconductor body, then producing at least one porous semiconductor body region in the semiconductor body starting from the at least one trench at least along a portion of the side walls of the trench, and then filling the trench with a semiconductor material of the semiconductor body. |
申请公布号 |
US8466046(B2) |
申请公布日期 |
2013.06.18 |
申请号 |
US201213407728 |
申请日期 |
2012.02.28 |
申请人 |
SCHULZE HANS-JOACHIM;MAUDER ANTON;SANTOS RODRIGUEZ FRANCISCO JAVIER;INFINEON TECHNOLOGIES AG |
发明人 |
SCHULZE HANS-JOACHIM;MAUDER ANTON;SANTOS RODRIGUEZ FRANCISCO JAVIER |
分类号 |
H01L21/20;H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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