| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing device that generates a plasma stably and effectively and thus processes an entire desired processing region of a substrate effectively in a short period of time, when the vicinity of a surface of the substrate is to be uniformly heat-processed at high temperature only for a very short period of time, or when the substrate is to be irradiated with a plasma from reactant gas, or simultaneously with a plasma and reactant gas flow, so as to be subjected to low-temperature plasma processing, and to provide a plasma processing method. <P>SOLUTION: In an inductively-coupled plasma torch unit T, solenoid coils 3 are arranged in the vicinity of a first quartz block 4 and a second quartz block 5 that is provided with a ground copper plate 16. A long chamber has an annular space 7 inside. A plasma P is discharged to a substrate 2 from a plasma discharge nozzle 8 as a slit-like opening in the long chamber. The long chamber and a substrate mounting platform 1 are relatively moved in a direction perpendicular to a longitudinal direction of the plasma discharge nozzle 8, so as to process the substrate 2. <P>COPYRIGHT: (C)2013,JPO&INPIT |
