发明名称 Semiconductor Device Including First and Second Semiconductor Elements
摘要 A semiconductor device includes a first semiconductor element including a first pn junction between a first terminal and a second terminal. The semiconductor device further includes a semiconductor element including a second pn junction between a third terminal and a fourth terminal. The semiconductor element further includes a semiconductor body including the first semiconductor element and the second semiconductor element monolithically integrated. The first and third terminals are electrically coupled to a first device terminal. The second and fourth terminals are electrically coupled to a second device terminal. A temperature coefficient alpha1 of a breakdown voltage Vbr1 of the first pn junction and a temperature coefficient alpha2 of a breakdown voltage Vbr2 of the second pn junction have a same algebraic sign and satisfy 0.6×alpha1<alpha2<1.1×alpha1 at T=300 K, wherein Vbr2<Vbr1.
申请公布号 US2013146971(A1) 申请公布日期 2013.06.13
申请号 US201213673389 申请日期 2012.11.09
申请人 INFINEON TECHNOLOGIES AG;INFINEON TECHNOLOGIES AG 发明人 HIRLER FRANZ;GLASER ULRICH;LENZHOFER CHRISTIAN
分类号 H01L27/02 主分类号 H01L27/02
代理机构 代理人
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