| 发明名称 |
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME |
| 摘要 |
A semiconductor device may include an interlayer insulating layer containing hydrogen and a first passivation layer configured to prevent or inhibit an out-gassing of the hydrogen. In the method, a second passivation layer configured to control a warpage characteristic of a wafer may be formed on the first passivation layer.
|
| 申请公布号 |
US2013147022(A1) |
申请公布日期 |
2013.06.13 |
| 申请号 |
US201213706960 |
申请日期 |
2012.12.06 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON JUNG-SOO;HONG JONGWON;PARK INSUN;LEE JONGMYEONG;CHOI SEUNG-WOOK |
| 分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
