Anchoring structure for metal structure of semiconductor device e.g. vertical power transistor, comprises anchoring recess structure comprising overhanging sidewall, which is formed by substrate of device having metal structure

摘要

The anchoring structure (200) comprises an anchoring recess structure (220) comprising an overhanging sidewall. The overhanging sidewall is formed by a semiconductor substrate of a semiconductor device having a metal structure (210), which is partly arranged within the anchoring recess structure. The semiconductor substrate comprises mono-crystalline semiconductor in which the anchoring recess structure is formed so that the overhanging sidewall is formed by the semiconductor. The anchoring recess structure is partially filled with polysilicon. The anchoring structure (200) comprises an anchoring recess structure (220) comprising an overhanging sidewall. The overhanging sidewall is formed by a semiconductor substrate of a semiconductor device having a metal structure (210), which is partly arranged within the anchoring recess structure. The semiconductor substrate comprises mono-crystalline semiconductor in which the anchoring recess structure is formed so that the overhanging sidewall is formed by the semiconductor. The anchoring recess structure is partially filled with polysilicon. The overhanging sidewall has an angle of 3[deg] related to a normal direction perpendicular to a main surface of the semiconductor device. The metal structure: comprises deposited conforming metal such that the metal structure is anchored by the anchoring recess structure and abuts the overhanging sidewall; and is adapted to the semiconductor substrate by an undercut tight fit. Independent claims are included for: (1) an intermeshing structure for a device comprising a cell field and formed on a substrate; and (2) a semiconductor device.