PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

Provided is a plasma processing apparatus (10), which is characterized in having: a processing container (12), inside of which can be depressurized; a lower electrode, which serves also as a placing table (20) having a wafer (W) placed thereon in the processing container; an upper electrode or an antenna electrode, which is disposed to face the lower electrode; a gas supply source (32), which introduces a gas into the processing container, said gas containing a halogen-containing gas and oxygen gas; a high-frequency power supply (18), which applies high-frequency power for generating plasma to at least the upper electrode, the antenna electrode or the lower electrode; and a means, which brings the gas into the plasma state with the high-frequency power for generating plasma, and performs plasma processing to the wafer on the placing table using plasma effects. The plasma processing apparatus is also characterized in that, out of the surfaces exposed to plasma in the processing container, at least a part of or the whole surfaces at the heights of the upper electrode, the antenna electrode or the lower electrode from a position where the wafer is placed are coated with a fluoride compound.