发明名称 |
Method of Manufacturing Semiconductor Device, Method of Processing Substrate, Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording Medium |
摘要 |
A method of manufacturing a semiconductor device is provided. The method includes: forming a thin film containing a predetermined element on a substrate by repeating a cycle, the cycle including: forming a first layer containing the predetermined element, nitrogen and carbon by alternately performing supplying a source gas containing the predetermined element and a halogen element to the substrate and supplying a first reactive gas containing three elements including the carbon, the nitrogen and hydrogen and having a composition wherein a number of carbon atoms is greater than that of nitrogen atoms to the substrate a predetermined number of times; forming a second layer by supplying a second reactive gas different from the source gas and the first reactive gas to the substrate to modify the first layer; and modifying a surface of the second layer by supplying a hydrogen-containing gas to the substrate.
|
申请公布号 |
US2013149874(A1) |
申请公布日期 |
2013.06.13 |
申请号 |
US201213708976 |
申请日期 |
2012.12.08 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC.;HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
HIROSE YOSHIRO;SANO ATSUSHI |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|