发明名称 |
METHOD FOR MANUFACTURING A HERMETICALLY SEALED STRUCTURE |
摘要 |
A method for providing hermetic sealing within a silicon-insulator composite wafer for manufacturing a hermetically sealed structure, comprising the steps of: patterning a first silicon wafer to have one or more recesses that extend at least partially through the first silicon wafer; filling said recesses with an insulator material able to be anodically bonded to silicon to form a first composite wafer having a plurality of silicon-insulator interfaces and a first contacting surface consisting of insulator material; and using an anodic bonding technique on the first contacting surface and an opposing second contacting surface to create hermetic sealing between the silicon-insulator interfaces, wherein the second contacting surface consists of silicon.
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申请公布号 |
US2013146994(A1) |
申请公布日期 |
2013.06.13 |
申请号 |
US201113639423 |
申请日期 |
2011.04.15 |
申请人 |
KITTILSLAND GJERMUND;LAPADATU DANIEL;JACOBSEN SISSEL;WESTGAARD TROND;SENSONOR AS |
发明人 |
KITTILSLAND GJERMUND;LAPADATU DANIEL;JACOBSEN SISSEL;WESTGAARD TROND |
分类号 |
B81C1/00;B81B7/00 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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