发明名称 |
Nonvolatile memory device and reading method to read first memory cell in accordance of data stored in second memory cell adjacent to first memory cell |
摘要 |
In a nonvolatile memory device and operating method thereof, data programmed into a second memory cell is sensed and a first memory cell adjacent the second memory cell is read in accordance with the data sensed from the second memory cell.
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申请公布号 |
US8462555(B2) |
申请公布日期 |
2013.06.11 |
申请号 |
US20100826261 |
申请日期 |
2010.06.29 |
申请人 |
PARK JIN SU;HYNIX SEMICONDUCTOR INC. |
发明人 |
PARK JIN SU |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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