发明名称 Nonvolatile memory device and reading method to read first memory cell in accordance of data stored in second memory cell adjacent to first memory cell
摘要 In a nonvolatile memory device and operating method thereof, data programmed into a second memory cell is sensed and a first memory cell adjacent the second memory cell is read in accordance with the data sensed from the second memory cell.
申请公布号 US8462555(B2) 申请公布日期 2013.06.11
申请号 US20100826261 申请日期 2010.06.29
申请人 PARK JIN SU;HYNIX SEMICONDUCTOR INC. 发明人 PARK JIN SU
分类号 G11C11/34 主分类号 G11C11/34
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