发明名称 SIMULATION METHOD, SIMULATION PROGRAM, SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a simulation method which allows for accurate prediction of the amount of damage of ultraviolet ray on a film. <P>SOLUTION: The simulation method for predicting the amount of damage due to ultraviolet ray is executed in the manufacturing of a semiconductor device from a predicted emission spectrum of an ultraviolet region, by calculating a prediction formula of light emission intensity of each wavelength in the ultraviolet region associated with the emission spectrum of a visible region by multivariate analysis, and then predicting the emission spectrum of the ultraviolet region by using the prediction formula thus calculated and the emission spectrum of a visible region detected actually. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013115355(A) 申请公布日期 2013.06.10
申请号 JP20110262418 申请日期 2011.11.30
申请人 SONY CORP 发明人 KUBOI NOBUYUKI;TATSUMI TETSUYA;FUKAZAWA MASANAGA
分类号 H01L21/3065;H01L21/00;H01L21/205;H05H1/00;H05H1/46 主分类号 H01L21/3065
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