发明名称 |
SIMULATION METHOD, SIMULATION PROGRAM, SEMICONDUCTOR MANUFACTURING APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a simulation method which allows for accurate prediction of the amount of damage of ultraviolet ray on a film. <P>SOLUTION: The simulation method for predicting the amount of damage due to ultraviolet ray is executed in the manufacturing of a semiconductor device from a predicted emission spectrum of an ultraviolet region, by calculating a prediction formula of light emission intensity of each wavelength in the ultraviolet region associated with the emission spectrum of a visible region by multivariate analysis, and then predicting the emission spectrum of the ultraviolet region by using the prediction formula thus calculated and the emission spectrum of a visible region detected actually. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013115355(A) |
申请公布日期 |
2013.06.10 |
申请号 |
JP20110262418 |
申请日期 |
2011.11.30 |
申请人 |
SONY CORP |
发明人 |
KUBOI NOBUYUKI;TATSUMI TETSUYA;FUKAZAWA MASANAGA |
分类号 |
H01L21/3065;H01L21/00;H01L21/205;H05H1/00;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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