发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY DEVICE AND CHARGED PARTICLE BEAM LITHOGRAPHY METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a device that can shorten a drawing time by quickening convergence on a solution when finding an irradiation amount through repetitive operation. <P>SOLUTION: A lithography device 100 includes: an irradiation amount coefficient calculation section 60 which calculates an irradiation correction coefficient of an (n)th repetition number of a charged particle beam shot in a small region through repetitive operation for each of meshes obtained by virtually dividing a drawing region of a sample; a variation rate calculation section 62 which computes a rate of variation to the (n)th irradiation amount correction coefficient calculated at the (n)th repetition number from an (n-1)th irradiation correction coefficient for each small region; an irradiation amount coefficient calculation part 65 which corrects the (n)th irradiation amount correction coefficient using an (n)th rate of variation for each small region; an irradiation amount calculation part 70 which computes an irradiation amount of a charged particle beam shot into each small region using the corrected (n)th irradiation amount compensation coefficient for each small region; and a drawing part 150 which draws a desired pattern in the small region with the irradiation amount. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013115303(A) 申请公布日期 2013.06.10
申请号 JP20110261561 申请日期 2011.11.30
申请人 NUFLARE TECHNOLOGY INC 发明人 MATSUMOTO HIRONOBU
分类号 H01L21/027;H01J37/305 主分类号 H01L21/027
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