| 摘要 |
A magnetic field sensor has a magnetoresistive rod having a stack of stacked layers that include a pinned layer having a fixed magnetization direction almost perpendicular to a longitudinal direction, a free layer comprising a magnetostrictive material having a coefficient of magnetostriction greater than 20 ppm to 25° C. and a longitudinal axis of easiest magnetization, the magnetization changing when the free layer is exposed to a magnetic field, a non-magnetic spacer layer interposed between the free and pinned layers to form a tunnel junction or spin valve, and a stress-generating layer for exerting uniaxial stress essentially such that a product of stress and magnetostriction coefficient is greater than 500 ppm·MPa at 25° C. The rod's length is at least ten times its greatest width.
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