| 发明名称 |
III-V METAL-OXIDE-SEMICONDUCTOR DEVICE |
| 摘要 |
A hafnium oxide layer, between a III-V semiconductor layer and a metal oxide layer is used to prevent interaction between the III-V semiconductor layer and the metal oxide layer.
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| 申请公布号 |
US2013140647(A1) |
申请公布日期 |
2013.06.06 |
| 申请号 |
US201313757861 |
申请日期 |
2013.02.04 |
| 申请人 |
NATIONAL CHIAO TUNG UNIVERSITY;NATIONAL CHIAO TUNG UNIVERSITY |
发明人 |
CHANG EDWARD YI;LIN YUEH-CHIN |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
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