| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a wafer processing body, wafer processing component, wafer processing temporary adhesive, and thin wafer production method using them that facilitate temporary adhesion, enable film formation with a uniform thickness on a wafer having a level difference, provide high adaptability to the wiring process on the wafer backside, and further facilitate removal and productivity. <P>SOLUTION: In a wafer processing body, a temporary adhesive layer is formed on a support medium, and a wafer which has a circuit plane on its surface and whose reverse side is to be processed is laminated on top of the temporary adhesive layer. The wafer processing body includes a composite temporary adhesive layer unit having a three-layer structure of the temporary adhesive layer comprising: a first temporary adhesive layer consisting of a thermoplastic organopolysiloxane polymer layer (A) which is separably bonded to the surface of the wafer; a second temporary adhesive layer consisting of a thermosetting modified siloxane polymer layer (B) which is laminated on the first temporary adhesive layer; and a third temporary adhesive layer consisting of a thermoplastic organopolysiloxane polymer layer (A') which is laminated on the second temporary adhesive layer and separably bonded to the support medium. Because of its high heat resistance, the temporary adhesive layer according to the invention can be applied in a wide range of semiconductor film deposition processes and also makes it possible for even a wafer having a level difference to form an adhesive layer which excels in the uniformity of film thickness. <P>COPYRIGHT: (C)2013,JPO&INPIT |
