发明名称 |
SELF-ALIGNED IMPLANTS TO REDUCE CROSS-TALK OF IMAGING SENSORS |
摘要 |
A method of preparing self-aligned isolation regions between two neighboring sensor elements on a substrate. The method includes patterning an oxide layer to form an opening between the two neighboring sensor elements on the substrate. The method further includes performing a first implant to form a deep doped region between the two neighboring sensor elements and starting at a distance below a top surface of the substrate. The method further includes performing a second implant to form a shallow doped region between the two neighboring sensor elements, wherein a bottom portion of the shallow doped region overlaps with a top portion of the deep doped region.
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申请公布号 |
US2013140666(A1) |
申请公布日期 |
2013.06.06 |
申请号 |
US201313736380 |
申请日期 |
2013.01.08 |
申请人 |
FU SHIH-CHI;TZENG KAI;LU WEN-CHEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
FU SHIH-CHI;TZENG KAI;LU WEN-CHEN |
分类号 |
H01L27/146;H01L31/18 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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