| 发明名称 |
METHOD FOR PRODUCING NITRIDE CRYSTAL |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a large sized nitride crystal having low dislocation and low distortion in which an influence of the curvature and distortion of a seed crystal on a crystal grown on the seed crystal is reduced. <P>SOLUTION: There is provided the method for producing the nitride crystal in which the nitride crystal is obtained by growing a grown crystal on the seed crystal in the a-axis direction and the grown crystal is grown in the a-axis direction of the seed crystal without substantial appearance of an A surface as a growth surface. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013107819(A) |
申请公布日期 |
2013.06.06 |
| 申请号 |
JP20120251369 |
申请日期 |
2012.11.15 |
| 申请人 |
MITSUBISHI CHEMICALS CORP |
发明人 |
FUJISAWA HIDEO;MIKAWA YUTAKA;KAMATA KAZUNORI |
| 分类号 |
C30B29/38;C30B7/10 |
主分类号 |
C30B29/38 |
| 代理机构 |
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代理人 |
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| 主权项 |
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