发明名称 |
Electroless plating of porous and non-porous nickel layers, and gold layer in semiconductor device |
摘要 |
A method for maintaining non-porous nickel layer at a nickel/passivation interface of a semiconductor device in a nickel/gold electroless plating process. The method can include sequentially electroless plating of each of the nickel layer and gold layer on the device layer to pre-determined thicknesses to prevent corrosion of the nickel layer from reaching the device layer during the electroless gold plating process.
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申请公布号 |
US8455361(B2) |
申请公布日期 |
2013.06.04 |
申请号 |
US20100943341 |
申请日期 |
2010.11.10 |
申请人 |
HERBSOMMER JUAN ALEJANDRO;LOPEZ OSVALDO;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HERBSOMMER JUAN ALEJANDRO;LOPEZ OSVALDO |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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