发明名称 Electroless plating of porous and non-porous nickel layers, and gold layer in semiconductor device
摘要 A method for maintaining non-porous nickel layer at a nickel/passivation interface of a semiconductor device in a nickel/gold electroless plating process. The method can include sequentially electroless plating of each of the nickel layer and gold layer on the device layer to pre-determined thicknesses to prevent corrosion of the nickel layer from reaching the device layer during the electroless gold plating process.
申请公布号 US8455361(B2) 申请公布日期 2013.06.04
申请号 US20100943341 申请日期 2010.11.10
申请人 HERBSOMMER JUAN ALEJANDRO;LOPEZ OSVALDO;TEXAS INSTRUMENTS INCORPORATED 发明人 HERBSOMMER JUAN ALEJANDRO;LOPEZ OSVALDO
分类号 H01L21/44 主分类号 H01L21/44
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