发明名称 Etchant for etching Al, Mo and ITO
摘要 An etchant is provided to etch gate electrodes formed of a double layer of aluminum alloy(AlNd) and molybdenum(Mo), source and drain electrodes formed of molybdenum, and pixel electrodes(ITO) during an etching process. An etchant includes 40-70wt% of phosphoric acid, 2-15wt% of nitric acid, 4-35wt% of acetic acid, 0.05-5wt% of a chlorine-based compound, 0.05-5wt% of a chlorine stabilizer, 0.05-5wt% of a lithium-based compound, 0.05-5wt% of a sulfide salt-based compound, and the balance of water. The chlorine-based compound comprises a compound capable of being dissociated into Cl^-. The chlorine stabilizer comprises a Zn, Cd, Pb, Ba-series compound and oleic acid.
申请公布号 KR101266077(B1) 申请公布日期 2013.06.04
申请号 KR20060040941 申请日期 2006.05.08
申请人 发明人
分类号 C09K13/04;C09K13/06 主分类号 C09K13/04
代理机构 代理人
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