| 摘要 |
<p>The invention relates to a method for making a ferro-electric Schottky diode. According to the invention, the method consists in depositing, onto a SRO support (3), a thin epitaxial layer (2) of PZT20/80, whereon there is deposited a punctiform Ta electrode (4) which has the role of ohmic contact, while the SRO support (3) has the role of a rectifying contact, and the PZT20/80 layer (2) has the role of ferro-electric memory, the singular Schottky diode is thus created at the junction (1) between the PZT20/80 layer (2) and the SRO support (3).</p> |
