发明名称 CRYSTAL SENSOR MADE BY ION IMPLANTATION
摘要 Disclosed is a method for producing a crystal sensor. The method includes selecting a crystal configured to sense a property of interest. The method further includes implanting ions in the crystal using ion-implantation to produce a conductive region within the crystal where the conductive region is capable of providing a signal to sense the property of interest. Also disclosed is a method and apparatus for estimating a property of interest using the crystal sensor in a borehole penetrating the earth.
申请公布号 US2013134981(A1) 申请公布日期 2013.05.30
申请号 US201113307801 申请日期 2011.11.30
申请人 LIU YI;MONTEIRO OTHON;SANDERLIN KERRY L.;CSUTAK SEBASTIAN;BAKER HUGHES INCORPORATED 发明人 LIU YI;MONTEIRO OTHON;SANDERLIN KERRY L.;CSUTAK SEBASTIAN
分类号 G01V3/20;C23C14/48 主分类号 G01V3/20
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