发明名称 |
CRYSTAL SENSOR MADE BY ION IMPLANTATION |
摘要 |
Disclosed is a method for producing a crystal sensor. The method includes selecting a crystal configured to sense a property of interest. The method further includes implanting ions in the crystal using ion-implantation to produce a conductive region within the crystal where the conductive region is capable of providing a signal to sense the property of interest. Also disclosed is a method and apparatus for estimating a property of interest using the crystal sensor in a borehole penetrating the earth. |
申请公布号 |
US2013134981(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201113307801 |
申请日期 |
2011.11.30 |
申请人 |
LIU YI;MONTEIRO OTHON;SANDERLIN KERRY L.;CSUTAK SEBASTIAN;BAKER HUGHES INCORPORATED |
发明人 |
LIU YI;MONTEIRO OTHON;SANDERLIN KERRY L.;CSUTAK SEBASTIAN |
分类号 |
G01V3/20;C23C14/48 |
主分类号 |
G01V3/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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