发明名称 METHOD FOR FORMING NEGATIVE PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming a negative pattern capable of obtaining a wide focus depth for a fine trench patter or a hole pattern by using a resist composition capable of preventing lowered surface solubility in organic solvent development. <P>SOLUTION: There is provided a method for forming a negative pattern, in which a resist composition, which contains a polymer compound [A] containing a repeating unit (a1) having a structure in which a carboxyl group is protected by an acid labile group and a repeating unit (a2) containing one or more structures selected from an amino group, an amide bond, a carbamate bond and a nitrogen-containing heterocycle, a photoacid generating agent [B] and an organic solvent [C], is applied on a substrate and heat treated after being applied to form a resist film, the resist film is then exposed to a high energy beam and heat treated after exposure, and an unexposed part of the resist film is selectively dissolved with a developing solution containing an organic solvent. When a resist composition, which contains a polymer compound having a specific structure, a photoacid generating agent and an organic solvent, is combined with organic solvent negative development, a surface hardly-soluble layer is prevented from being formed and a wide focus depth for a fine trench pattern or a hole pattern can be obtained. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013105165(A) 申请公布日期 2013.05.30
申请号 JP20110251229 申请日期 2011.11.17
申请人 SHIN ETSU CHEM CO LTD 发明人 KOBAYASHI TOMOHIRO;KATAYAMA KAZUHIRO;HATAKEYAMA JUN;FUNATSU AKIYUKI;TACHIBANA SEIICHIRO
分类号 G03F7/32;C08F220/10;G03F7/038;G03F7/039;H01L21/027 主分类号 G03F7/32
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