发明名称 |
METHOD OF MANUFACTURING GaN-BASED SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a GaN-based semiconductor device includes the steps of: preparing a composite substrate including: a support substrate having a thermal expansion coefficient at a ratio of not less than 0.8 and not more than 1.2 relative to a thermal expansion coefficient of GaN; and a GaN layer bonded to the support substrate, using an ion implantation separation method; growing at least one GaN-based semiconductor layer on the GaN layer of the composite substrate; and removing the support substrate of the composite substrate by dissolving the support substrate. Thus, the method of manufacturing a GaN-based semiconductor device is provided by which GaN-based semiconductor devices having excellent characteristics can be manufactured at a high yield ratio.
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申请公布号 |
US2013137220(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201213814037 |
申请日期 |
2012.03.26 |
申请人 |
MATSUBARA HIDEKI;ISHIHARA KUNIAKI;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MATSUBARA HIDEKI;ISHIHARA KUNIAKI |
分类号 |
H01L21/50 |
主分类号 |
H01L21/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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