发明名称 |
VARIABLE-RESISTANCE MATERIAL MEMORIES AND METHODS |
摘要 |
Variable-resistance memory material cells are contacted by vertical bottom spacer electrodes. Variable-resistance material memory spacer cells are contacted along the edge by electrodes. Processes include the formation of the bottom spacer electrodes as well as the variable-resistance material memory spacer cells. Devices include the variable-resistance memory cells.
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申请公布号 |
US2013134378(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201213723757 |
申请日期 |
2012.12.21 |
申请人 |
MICRON TECHNOLOGY, INC.;MICRON TECHNOLOGY, INC. |
发明人 |
LIU JUN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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