发明名称 |
SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME |
摘要 |
Example embodiments of inventive concepts relate to semiconductor memory devices and/or methods for fabricating the same. The semiconductor memory device may include a plurality of gates vertically stacked on a substrate, a vertical channel penetrating the plurality of gates and a data storage layer between the vertical channel and the plurality of gates. The vertical channel may include a lower channel connected to the substrate and an upper channel on the lower channel. The upper channel may include a vertical pattern penetrating some of the plurality of gates and defining an inner space filled with an insulating layer, and a horizontal pattern horizontally extending along a top surface of the lower channel. The horizontal pattern may be in contact with the top surface of the lower channel. |
申请公布号 |
US2013134492(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201213587379 |
申请日期 |
2012.08.16 |
申请人 |
YANG JUNKYU;NAM PHIL OUK;KIM JINGYUN;AHN JAEYOUNG;LIM SEUNGHYUN;HWANG KIHYUN |
发明人 |
YANG JUNKYU;NAM PHIL OUK;KIM JINGYUN;AHN JAEYOUNG;LIM SEUNGHYUN;HWANG KIHYUN |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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