SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A silicon carbide layer (50) includes a first region (51) having a first conductivity type, a second region (52) that is disposed on the first region and has a second conductivity type, and a third region (53) that is disposed on the second region (52) and has the first conductivity type. A trench (TR) with an inner surface is formed on the silicon carbide layer (50). The trench (TR) passes through the second and third regions (52, 53). The inner surface of the trench (TR) has a first side wall (SW1), and a second side wall (SW2) that is positioned deeper than the first side wall (SW1) and has a portion comprising the second region (52). The slope of the first side wall (SW1) is smaller than the slope of the second of the second side wall (SW2).