| 摘要 |
<p>The subject matter of the invention is a method for producing a graphene film comprising the controlled growth of a graphene film, characterized in that it also comprises the following steps: - the depositing of at least one layer of metal (CM) at the surface of a substrate (S); - the continuous production of a carbon-rich buried region (CC) inside said layer of metal, performed by means of the impacting of a stream of carbon atoms and/or of carbon ions having an energy greater than approximately a few tens of electron volts, in order to penetrate a part of the layer of metal, making it possible to create and maintain said carbon-rich region, so as to form, by diffusion in said metal layer, a graphene film (CG) at the interface of said metal layer with said substrate.</p> |
