| 发明名称 |
METHOD FOR PRODUCING &bgr;-Ga2O3 CRYSTAL |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a β-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>crystal, by which twin crystal density of the β-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>crystal is made to be equal to an allowance value or less. <P>SOLUTION: The method for producing a β-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>crystal includes: a first step of setting a target value of a widening angle θ of a shoulder part of a β-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>single crystal 25 with respect to a pulling direction of a seed crystal larger as the allowance value gets smaller in order to make the twin crystal density during growth of the β-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>single crystal 25 by an EFG (Edge-defined film-fed growth) method to be equal to the allowance value or less; and a second step of growing the β-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>crystal by controlling temperature or pulling speed of the seed crystal 20 during the crystal growth in order to make the β-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>single crystal 25 grow at a widening angle θ of a shoulder part set in the first step as the target value. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013103863(A) |
申请公布日期 |
2013.05.30 |
| 申请号 |
JP20110249890 |
申请日期 |
2011.11.15 |
| 申请人 |
TAMURA SEISAKUSHO CO LTD;KOHA CO LTD |
发明人 |
KOSHI KIMIYOSHI;UJIIE TAKEKAZU |
| 分类号 |
C30B29/16;C30B15/34 |
主分类号 |
C30B29/16 |
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