| 发明名称 |
Oxide semiconductors and thin film transistors comprising the same |
| 摘要 |
Oxide semiconductors and thin film transistors (TFTs) including the same are provided. An oxide semiconductor includes Zn atoms and at least one of Ta and Y atoms added thereto. A thin film transistor (TFT) includes a channel including an oxide semiconductor including Zn atoms and at least one of Ta and Y atoms added thereto.
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| 申请公布号 |
US8450732(B2) |
申请公布日期 |
2013.05.28 |
| 申请号 |
US20080213402 |
申请日期 |
2008.06.19 |
| 申请人 |
KIM CHANG-JUNG;KIM SANG-WOOK;KIM SUN-IL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM CHANG-JUNG;KIM SANG-WOOK;KIM SUN-IL |
| 分类号 |
H01L29/12;C04B35/46;C04B35/48;C04B35/49;H01B1/02 |
主分类号 |
H01L29/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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