| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an active matrix type display device having a pixel structure in which a pixel electrode formed in a pixel portion, a scanning line (gate line) and a data line are suitably arranged, and high numerical aperture is realized without increasing the number of masks and the number of processes. <P>SOLUTION: First wiring 102 arranged between a semiconductor film 107 and a substrate through a first insulating film is overlapped with the semiconductor film 107 and is used as a light interrupting film. Further, a second insulating film used as a gate insulating film is formed on the semiconductor film, and a gate electrode and second wiring 134 are formed on the second insulating film. The first wiring and the second wiring cross each other through the first and second insulating films. A third insulating film is formed as an interlayer insulating film on the second wiring 134, and a pixel electrode 147 is formed on the third insulating film. The pixel electrode 147 can be overlapped with the first wiring and the second wiring so that an area of the pixel electrode 147 can be increased in the display device of a reflection type. <P>COPYRIGHT: (C)2013,JPO&INPIT |
