发明名称 |
ELECTRO-STATIC DISCHARGE PROTECTION DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING ELECTRO-STATIC DISCHARGE PROTECTION DEVICE |
摘要 |
An electro-static discharge protection device including a gate electrode formed on a substrate. First and second diffusion regions of a first conductivity type are formed in the substrate with the gate electrode located in between. A first silicide layer is formed in the first diffusion region. A silicide block region is formed between the gate electrode and the first silicide layer. A third diffusion region is formed below the first silicide layer to partially overlap the first diffusion region. The third diffusion region and first silicide layer have substantially the same shapes and dimensions. The third diffusion region and a portion below the gate electrode located at the same depth as the third diffusion region contain impurities of a second conductivity type. The third diffusion region has an impurity concentration that is higher than that of the portion below the gate electrode.
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申请公布号 |
US2013130483(A1) |
申请公布日期 |
2013.05.23 |
申请号 |
US201213715773 |
申请日期 |
2012.12.14 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
SUZUKI TERUO |
分类号 |
H01L21/04 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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