| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve heat dissipation of a semiconductor device. <P>SOLUTION: The semiconductor device includes a semiconductor element and a wiring substrate constituted with a conductive wiring and an insulating substrate in which a part of side surface and a rear surface has a cut part, with the semiconductor element being mounted. The conductive wiring includes an upper surface conductive wiring, on an upper surface of the insulating substrate, which contains at least copper and is larger than the contour of the semiconductor element in terms of footprint, and a rear surface conductive wiring which is electrically connected to the upper surface conductive wiring, on the rear surface of the insulating substrate. The rear surface conductive wiring is constituted with a first metal film which contains at least tungsten and is arranged by being extended from the rear surface of the insulating substrate to the cut part, and a second metal film which contains at least copper and is wider than the footprint of the first metal film, with a part thereof being arranged on the first metal film. The second metal film has almost constant film thickness from above the first metal film across to above the rear surface of the insulating substrate on which the first metal film is not arranged. <P>COPYRIGHT: (C)2013,JPO&INPIT |
