| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an RF switch which controllably resists RF voltage Vsw to be applied, and a method for manufacturing such a switch. <P>SOLUTION: A switch has strings of serially connected configuration FETs, nodes of the strings are between the respective pairs of the adjacent FETs. In the method, capacitance between different nodes of the strings is controlled so as to effectively adjust the strings in capacity so as to reduce mismatch of RF switch voltage which is distributed for over the respective configuration FETs, and thus, switch breakdown voltage is raised. The capacitance is controlled, for example, by performing capacity characteristic arrangement between the nodes of the strings, and/or varying a design parameter of a different configuration FET. For the respective nodes, the sum of the product of the respective significant capacitors by ratio of Vsw to appear in the nodes can be controlled so as to become about zero. <P>COPYRIGHT: (C)2013,JPO&INPIT |
