发明名称 |
Method of fabricating polycrystalline silicon, TFT fabricated using the same, method of fabricating the TFT, and organic light emitting diode display device including the TFT |
摘要 |
A method of fabricating a polycrystalline silicon (poly-Si) layer includes providing a substrate, forming an amorphous silicon (a-Si) layer on the substrate, forming a thermal oxide layer to a thickness of about 10 Å to 50 Å on the a-Si layer, forming a metal catalyst layer on the thermal oxide layer, and annealing the substrate to crystallize the a-Si layer into the poly-Si layer using a metal catalyst of the metal catalyst layer. Thus, the a-Si layer can be crystallized into a poly-Si layer by a super grain silicon (SGS) crystallization method. Also, the thermal oxide layer may be formed during the dehydrogenation of the a-Si layer so that an additional process of forming a capping layer required for the SGS crystallization method can be omitted, thereby simplifying the fabrication process.
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申请公布号 |
US8445336(B2) |
申请公布日期 |
2013.05.21 |
申请号 |
US20100891379 |
申请日期 |
2010.09.27 |
申请人 |
YANG TAE-HOON;LEE KI-YONG;SEO JIN-WOOK;PARK BYOUNG-KEON;LEE KIL-WON;SAMSUNG DISPLAY CO., LTD. |
发明人 |
YANG TAE-HOON;LEE KI-YONG;SEO JIN-WOOK;PARK BYOUNG-KEON;LEE KIL-WON |
分类号 |
H01L21/00;H01L21/84 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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