| 摘要 |
A photolithography method of patterning photoresist involves disposing a two-dimensional array of focusing particles of spherical or other shape on the photoresist and illuminating the particles on the photoresist to generate deep, sub-wavelength patterns on the photoresist. When developed, a positive photoresist layer generates a two-dimensional array of micro- or nano-holes on the developed photoresist. When developed, a negative photoresist layer generates a two-dimensional array of micro- or nano-pillars on the developed photoresist.
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