| 摘要 |
PURPOSE:To provide a method for manufacturing a semiconductor device in which the area of a cell is reduced and a large scale integration is possible. CONSTITUTION:In order to mold a first conductor film 13 for constituting a storage node 12 by etching, it is etched with a cylinder of a second conductor film 16 for similarly constituting the node 12 as a mask. Thus, since it is not necessary to provide an aligning margin, the area of a capacitor can be reduced. |
