| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a trench type Schottky junction semiconductor device capable of reducing a trench opening width, without reducing a withstand voltage. <P>SOLUTION: The cross-sectional shape of a trench is formed to be a sub-trench shape having a higher center of a trench bottom face portion and a lower periphery. By introducing a p-type impurity vertically to a drift layer surface, a p+SiC region formed to contact to the inner wall of the trench having the sub-trench is formed in such a manner that a junction position in the periphery of the trench bottom face is deeper than a junction position at the center of the trench bottom face. <P>COPYRIGHT: (C)2013,JPO&INPIT |
