| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce capacitance between wires by forming the wire on the upper side of an etch stop layer. CONSTITUTION: Contact holes(H1,H2) pass through an etch stop layer and a first interlayer dielectric layer(43). Contact plugs(44) are formed in the contact holes. A second interlayer dielectric layer is formed on the upper sides of the etch stop layer and the contact plugs. Wiring trenches expose the contact plugs. Wires are connected to the contact plugs. [Reference numerals] (AA) Cell region; (BB) Peripheral circuit region |
