| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that prevents current concentration in the vicinity of a withstand-voltage region and power loss. <P>SOLUTION: A semiconductor device 1a includes: a first-conductivity-type semiconductor substrate 2; a first main electrode 17 that is provided on one side of the semiconductor substrate; a second-conductivity-type first semiconductor layer 11 that is provided on the other side of the semiconductor substrate so as to be spaced apart from a marginal portion of the semiconductor substrate; a plurality of second-conductivity-type second semiconductor layers 12 that are selectively provided between the marginal portion and the first semiconductor layer on the other side of the semiconductor substrate; an insulating film 13 that is provided so as to cover at least a part of the first semiconductor layer from the marginal portion; a conductive film 14 that is provided so as to cover the insulating film and a part of the first semiconductor layer; and a second main electrode 15 that is provided so as to be in contact with the first semiconductor layer and the conductive film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
