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发明名称
Verfahren zur Herstellung eines Substrats mit kristallinen Halbleitergebieten mit unterschiedlichen Eigenschaften, die über einem kristallinen Vollsubstrat angeordnet sind und damit hergestelltes Halbleiterbauelement
摘要
申请公布号
DE102004057764(B4)
申请公布日期
2013.05.16
申请号
DE20041057764
申请日期
2004.11.30
申请人
ADVANCED MICRO DEVICES, INC.
发明人
WEI, ANDY;KAMMLER, THORSTEN;RAAB, MICHAEL;HORSTMANN, MANFRED
分类号
H01L21/20;H01L21/336;H01L21/762;H01L21/8238;H01L27/092;H01L29/04
主分类号
H01L21/20
代理机构
代理人
主权项
地址
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