发明名称 THIN FILM FORMING SUBSTRATE AND THIN FILM FORMING METHOD
摘要 <p>A thin film forming method comprises: a substrate preparation step for preparing a substrate; a thin film forming step for forming a thin film on the substrate; and a crystallization step for applying a light beam to the thin film to crystallize the thin film. The crystallization step comprises: a first crystallization step for applying a light beam under a first condition to the thin film in a first thin film forming region including an end portion of the substrate and/or a region which a cutting line passes when the substrate is cut to thereby crystallize the thin film in the first thin film forming region to produce a first crystalline thin film; and, after the first crystallization step, a second crystallization step for applying a light beam under a second condition to the thin film in a second thin film forming region that is a region different from at least the first thin film forming region to thereby crystallize the thin film in the second thin film forming region to produce a second crystalline thin film, and the optical absorptivity of the light beam under the second condition of the thin film is higher than that of the first crystalline thin film.</p>
申请公布号 WO2013069056(A1) 申请公布日期 2013.05.16
申请号 WO2011JP06258 申请日期 2011.11.09
申请人 PANASONIC CORPORATION;NISHIDA, KENICHIROU;ODA, TOMOHIKO;SAITOU, YUI 发明人 NISHIDA, KENICHIROU;ODA, TOMOHIKO;SAITOU, YUI
分类号 H01L21/20;H01L21/268 主分类号 H01L21/20
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