发明名称 |
GATE STRUCTURES AND METHODS OF MANUFACTURE |
摘要 |
A metal gate structure with a channel material and methods of manufacture such structure is provided. The method includes forming dummy gate structures on a substrate. The method further includes forming sidewall structures on sidewalls of the dummy gate structures. The method further includes removing the dummy gate structures to form a first trench and a second trench, defined by the sidewall structures. The method further includes forming a channel material on the substrate in the first trench and in the second trench. The method further includes removing the channel material from the second trench while the first trench is masked. The method further includes filling remaining portions of the first trench and the second trench with gate material.
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申请公布号 |
US2013119473(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201113293210 |
申请日期 |
2011.11.10 |
申请人 |
KWON UNOH;MURALIDHAR RAMACHANDRAN;ONTALUS VIOREL;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KWON UNOH;MURALIDHAR RAMACHANDRAN;ONTALUS VIOREL |
分类号 |
H01L21/8234;H01L21/8238;H01L27/088 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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