发明名称 |
RECESSED BOTTOM-ELECTRODE CAPACITORS AND METHODS OF ASSEMBLING SAME |
摘要 |
<p>A capacitor-over-bitline structure includes a bottom electrode that has an open vessel form factor. The bottom-electrode form factor includes a floor, rectilinear sidewalls, and a rim that defines the topmost feature. A capacitor dielectric film contacts and covers the floor, the sidewalls, and the rim. A top electrode has a convex form factor that complements the concave bottom-electrode form factor. A process of forming the capacitor-over-bitline structure by spinning on a reflowable sacrificial material such as an oxide that covers both logic and memory portions of a semiconductive device, followed by a polish-back process and a recessing etch of the bottom electrode.</p> |
申请公布号 |
WO2013070221(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
WO2011US60113 |
申请日期 |
2011.11.10 |
申请人 |
INTEL CORPORATION;BRAIN, RUTH A.;STEIGERWALD, JOSEPH M. |
发明人 |
BRAIN, RUTH A.;STEIGERWALD, JOSEPH M. |
分类号 |
H01L21/8242;H01L21/28;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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