发明名称 |
PRODUCTION METHOD OF FERROELECTRIC MATERIAL LAYER, THIN FILM TRANSISTOR AND PIEZOELECTRIC INK JET HEAD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production method of a ferroelectric material layer the electrical characteristics of which can be enhanced furthermore. <P>SOLUTION: The production method of a ferroelectric material layer includes a ferroelectric material precursor layer formation step for forming the precursor layer of a ferroelectric material by coating a substrate with a sol-gel solution, a drying step for drying the precursor layer at a first temperature in the range of 120°C-250°C, a type push step for performing type push processing of the precursor layer while heating to a second temperature higher than the first temperature and in the range of 150°C-300°C, and a ferroelectric material layer formation step for forming the ferroelectric material layer from the precursor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013093586(A) |
申请公布日期 |
2013.05.16 |
申请号 |
JP20120265998 |
申请日期 |
2012.12.05 |
申请人 |
JAPAN SCIENCE &, TECHNOLOGY AGENCY;SEIKO EPSON CORP |
发明人 |
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分类号 |
H01L21/8246;B41J2/045;B41J2/055;B41J2/16;H01L21/316;H01L27/105;H01L41/09;H01L41/18;H01L41/187;H01L41/22;H01L41/39 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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