发明名称 PRODUCTION METHOD OF FERROELECTRIC MATERIAL LAYER, THIN FILM TRANSISTOR AND PIEZOELECTRIC INK JET HEAD
摘要 <P>PROBLEM TO BE SOLVED: To provide a production method of a ferroelectric material layer the electrical characteristics of which can be enhanced furthermore. <P>SOLUTION: The production method of a ferroelectric material layer includes a ferroelectric material precursor layer formation step for forming the precursor layer of a ferroelectric material by coating a substrate with a sol-gel solution, a drying step for drying the precursor layer at a first temperature in the range of 120&deg;C-250&deg;C, a type push step for performing type push processing of the precursor layer while heating to a second temperature higher than the first temperature and in the range of 150&deg;C-300&deg;C, and a ferroelectric material layer formation step for forming the ferroelectric material layer from the precursor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013093586(A) 申请公布日期 2013.05.16
申请号 JP20120265998 申请日期 2012.12.05
申请人 JAPAN SCIENCE &amp, TECHNOLOGY AGENCY;SEIKO EPSON CORP 发明人
分类号 H01L21/8246;B41J2/045;B41J2/055;B41J2/16;H01L21/316;H01L27/105;H01L41/09;H01L41/18;H01L41/187;H01L41/22;H01L41/39 主分类号 H01L21/8246
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