发明名称 |
DEVICES FORMED FROM A NON-POLAR PLANE OF A CRYSTALLINE MATERIAL AND METHOD OF MAKING THE SAME |
摘要 |
Materials, methods, structures and device including the same can provide a semiconductor device such as an LED using an active region corresponding to a non-polar face or surface of III-V semiconductor crystalline material. In some embodiments, an active diode region contains more non-polar III-V material oriented to a non-polar plane than III-V material oriented to a polar plane. In other embodiments, a bottom region contains more non-polar m-plane or a-plane surface area GaN than polar c-plane surface area GaN facing an active region. |
申请公布号 |
EP2415083(A4) |
申请公布日期 |
2013.05.15 |
申请号 |
EP20100759377 |
申请日期 |
2010.04.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LOCHTEFELD, ANTHONY, J. |
分类号 |
H01L33/00;H01L21/02;H01L31/0304;H01L33/08;H01L33/12;H01L33/16;H01L33/24 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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