发明名称 |
METHOD FOR IMPLANTING A PIEZOELECTRIC MATERIAL |
摘要 |
<p>A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.</p> |
申请公布号 |
EP2591515(A1) |
申请公布日期 |
2013.05.15 |
申请号 |
EP20110730951 |
申请日期 |
2011.07.05 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;SOITEC |
发明人 |
DEGUET, CHRYSTEL;BLANC, NICOLAS;IMBERT, BRUNO;MOULET, JEAN-SEBASTIEN |
分类号 |
H01L41/313;H01L41/22;H01L41/312 |
主分类号 |
H01L41/313 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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