发明名称 System and method for processing signals in high speed DRAM
摘要 A method is disclosed for operating a memory device, including providing a timing signal comprising a plurality of clock cycles, providing an activate signal, and providing a bank address signal. An activate command executes on every first duration of clock cycles, and the bank address signal is high for at least a portion of the first duration of clock cycles. In one embodiment, the first duration of the activate signal is at least four clock cycles, and the bank address signal is at least one clock cycle. A memory device having a row decoder and an active driver is also provided.
申请公布号 US8441886(B2) 申请公布日期 2013.05.14
申请号 US201113098168 申请日期 2011.04.29
申请人 BA BEN;WONG VICTOR;MICRON TECHNOLOGY, INC. 发明人 BA BEN;WONG VICTOR
分类号 G11C11/00 主分类号 G11C11/00
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